Texas Instruments MSP430x1xx Uživatelský manuál Strana 132

  • Stažení
  • Přidat do mých příruček
  • Tisk
  • Strana
    / 432
  • Tabulka s obsahem
  • KNIHY
  • Hodnocené. / 5. Na základě hodnocení zákazníků
Zobrazit stránku 131
Flash Memory Introduction
5-2
Flash Memory Controller
5.1 Flash Memory Introduction
The MSP430 flash memory is bit-, byte-, and word-addressable and
programmable. The flash memory module has an integrated controller that
controls programming and erase operations. The controller has three
registers, a timing generator, and a voltage generator to supply program and
erase voltages.
MSP430 flash memory features include:
- Internal programming voltage generation
- Bit, byte or word programmable
- Ultralow-power operation
- Segment erase and mass erase
The block diagram of the flash memory and controller is shown in Figure 5−1.
Note: Minimum V
CC
During Flash Write or Erase
The minimum V
CC
voltage during a flash write or erase operation is 2.7 V.
If V
CC
falls below 2.7 V during a write or erase, the result of the write or erase
will be unpredictable.
Figure 5−1. Flash Memory Module Block Diagram
Enable
Data Latch
Enable
Address
Latch
Address Latch
Data Latch
MAB
MDB
FCTL1
FCTL2
FCTL3
Timing
Generator
Programming
Voltage
Generator
Flash
Memory
Array
Zobrazit stránku 131
1 2 ... 127 128 129 130 131 132 133 134 135 136 137 ... 431 432

Komentáře k této Příručce

Žádné komentáře